| PART |
Description |
Maker |
| FGW30N60VD |
Discrete IGBT (High-Speed V series) 600V / 30A
|
Fuji Electric
|
| FGW35N60HD |
Discrete IGBT (High-Speed V series) 600V / 35A
|
Fuji Electric
|
| FGW40N120H |
Discrete IGBT (High-Speed V series) 1200V / 40A
|
Fuji Electric
|
| FGW40N120VD |
Discrete IGBT (High-Speed V series) 1200V / 40A
|
Fuji Electric
|
| FGW30N120HD |
Discrete IGBT (High-Speed V series) 1200V / 30A
|
Fuji Electric
|
| FGW25N120VD |
Discrete IGBT (High-Speed V series) 1200V / 25A
|
Fuji Electric
|
| FGW15N120VD |
Discrete IGBT (High-Speed V series) 1200V / 15A
|
Fuji Electric
|
| SGF23N60UFD SGF23N60UFDTU |
240 x 320 pixel format (Portrait Mode), CFL Backlight available with power harness 23 A, 600 V, N-CHANNEL IGBT
Ultra-Fast IGBT
Discrete, High Performance IGBT
|
Fairchild Semiconductor, Corp.
FAIRCHILD[Fairchild Semiconductor]
|
| IRG4PC60U-P |
INSULATED GATE BIPOLAR TRANSISTOR UltraFast Speed IGBT
600V UltraFast 8-60 kHz Discrete IGBT in a TO-247AC Solder Plate package
|
IRF[International Rectifier]
|
| SGW6N60UFD SGW6N60UFDTM |
Discrete, High Performance IGBT with Diode
Ultra-Fast IGBT
|
FAIRCHILD[Fairchild Semiconductor]
|
| SGF40N60UF SGF40N60UFTU |
Discrete, High Performance IGBT
Ultra-Fast IGBT
|
FAIRCHILD[Fairchild Semiconductor]
|
| MG150Q2YS65H |
IGBT Module Silicon N Channel IGBT High Power & High Speed Switching Applications
|
Toshiba Semiconductor
Toshiba Corporation
|
